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ORCIDArnaud Régnier
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2020 – today
- 2023
[c13]Lucas Antunes Tambara
, Pascal Masson, Julien Amouroux, Stéphane Monfray, Julien Dura, Frederic Gianesello, Julien Babic, Romain Debroucke, Loic Welter, Siddhartha Dhar, Bernadette Gros, Clement Charbuillet, Franck Julien, Guillaume Bertrand, Arnaud Régnier, Alain Fleury:
Notched gate MOSFET for capacitance reduction in RF SOI technology. DTTIS 2023: 1-4- [c12]Radouane Habhab, Vincenzo Della Marca, Pascal Masson, Nadia Miridi, Clement Pribat, Simon Jeannot, Thibault Kempf, Marc Mantelli, Philippe Lorenzini, Jean-Marc Voisin, Arnaud Régnier, Stephan Niel, Francesco La Rosa:
40nm SONOS Embedded Select in Trench Memory. ESSDERC 2023: 21-24 - 2022
- [c11]Paul Devoge, Hassen Aziza, Philippe Lorenzini, Pascal Masson, Alexandre Malherbe, Franck Julien, Abderrezak Marzaki, Arnaud Régnier, Stephan Niel:
A Schmitt trigger to benchmark the performance of a new zero-cost transistor. ICECS 2022 2022: 1-4 - [c10]Paul Devoge, Hassen Aziza, Philippe Lorenzini, Alexandre Malherbe, Franck Julien, Abderrezak Marzaki, Arnaud Régnier, Stephan Niel:
Digital-to-analog converters to benchmark the matching performance of a new zero-cost transistor. ISCAS 2022: 761-764 - 2021
- [c9]Paul Devoge, Hassen Aziza, Philippe Lorenzini, Franck Julien, Abderrezak Marzaki, Alexandre Malherbe, Marc Mantelli, Thomas Sardin, Sébastien Haendler, Arnaud Régnier, Stephan Niel:
Circuit-level evaluation of a new zero-cost transistor in an embedded non-volatile memory CMOS technology. DTIS 2021: 1-5 - [c8]Romeric Gay, Vincenzo Della Marca, Hassen Aziza, Arnaud Régnier, Stephan Niel, Abderrezak Marzaki:
Benchmarking and optimization of trench-based multi-gate transistors in a 40 nm non-volatile memory technology. DTIS 2021: 1-4 - [c7]Franck Matteo, Roberto Simola, Franck Melul, Karine Coulié, Jérémy Postel-Pellerin, Arnaud Régnier:
Simulation of state of the art EEPROM programming window closure during endurance degradation. DTIS 2021: 1-5 - [c6]Franck Melul, Thibault Kempf, Vincenzo Della Marca, Marc Bocquet, Madjid Akbal, Frederique Trenteseaux, Marc Mantelli, Arnaud Régnier, Stephan Niel, Francesco La Rosa:
Hot Electron Source Side Injection Comprehension in 40nm eSTM™. IMW 2021: 1-4 - 2020
- [c5]Jordan Locati, Vincenzo Della Marca, Christian Rivero, Arnaud Régnier, Stephan Niel, Karine Coulié:
AC stress reliability study of a new high voltage transistor for logic memory circuits. IRPS 2020: 1-5
2010 – 2019
- 2018
- [j5]Vincenzo Della Marca, Jérémy Postel-Pellerin, Thibault Kempf, Arnaud Régnier, Philippe Chiquet, Marc Bocquet:
Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. Microelectron. Reliab. 88-90: 159-163 (2018) - [c4]Thibault Kempf, Vincenzo Della Marca, L. Baron, F. Maugain, Francesco La Rosa, Stephan Niel, Arnaud Régnier, Jean-Michel Portal, Pascal Masson:
Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip. IRPS 2018: 6 - 2015
- [c3]Jordan Innocenti, Franck Julien, Jean-Michel Portal, Laurent Lopez, Q. Hubert, Pascal Masson, Jacques Sonzogni, Stephan Niel, Arnaud Régnier:
Layout optimizations to decrease internal power and area in digital CMOS standard cells. MIPRO 2015: 1582-1587 - 2014
- [c2]Jordan Innocenti, Loic Welter, Franck Julien, Laurent Lopez, Jacques Sonzogni, Stephan Niel, Arnaud Régnier, Emmanuel Paire, Karen Labory, Eric Denis, Jean-Michel Portal, Pascal Masson:
Dynamic power reduction through process and design optimizations on CMOS 80 nm embedded non-volatile memories technology. MWSCAS 2014: 897-900 - 2012
- [j4]Guillaume Just, Vincenzo Della Marca, Arnaud Régnier, Jean-Luc Ogier, Jérémy Postel-Pellerin, Jean-Michel Portal, Pascal Masson:
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability. J. Low Power Electron. 8(5): 717-724 (2012) - [j3]R. Llido, Pascal Masson, Arnaud Régnier, Vincent Goubier, Gérald Haller, Vincent Pouget, Dean Lewis:
Effects of 1064 nm laser on MOS capacitor. Microelectron. Reliab. 52(9-10): 1816-1821 (2012) - 2010
- [j2]Jérémy Postel-Pellerin, Romain Laffont, Gilles Micolau, Frédéric Lalande, Arnaud Régnier, Bernard Bouteille:
Leakage paths identification in NVM using biased data retention. Microelectron. Reliab. 50(9-11): 1474-1478 (2010)
2000 – 2009
- 2008
- [j1]D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, Didier Goguenheim:
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. Microelectron. Reliab. 48(8-9): 1318-1321 (2008) - 2006
- [c1]B. Saillet, Arnaud Régnier, Jean-Michel Portal, B. Delsuc, Romain Laffont, Pascal Masson, Rachid Bouchakour:
MM11 based flash memory cell model including characterization procedure. ISCAS 2006
Coauthor Index
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