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2020 – today
- 2024
[c10]S.-H. Lin, Marko Simicic, N. Pantano, S.-H. Chen, Geert Van der Plas, Eric Beyne, Piet Wambacq:
Toward 0 V ESD Protection in 2.5D/3D Advanced Bonding Technology. VLSI Technology and Circuits 2024: 1-2- 2022
- [c9]Artemisia Tsiara
, Alicja Lesniewska, Philippe Roussel, Srinivasan Ashwyn Srinivasan, Mathias Berciano, Marko Simicic, Marianna Pantouvaki, Joris Van Campenhout, Kristof Croes:
Degradation mechanisms in Germanium Electro-Absorption Modulators. IRPS 2022: 9
2010 – 2019
- 2019
- [j3]Marko Simicic, Pieter Weckx, Bertrand Parvais, Philippe Roussel, Ben Kaczer, Georges G. E. Gielen:
Understanding the Impact of Time-Dependent Random Variability on Analog ICs: From Single Transistor Measurements to Circuit Simulations. IEEE Trans. Very Large Scale Integr. Syst. 27(3): 601-610 (2019) - [c8]Shih-Hung Chen, Dimitri Linten, Geert Hellings, Marko Simicic, Ben Kaczer, Thomas Chiarella, Hans Mertens, Jérôme Mitard, Anda Mocuta, N. Horiguchi:
CDM-Time Domain Turn-on Transient of ESD Diodes in Bulk FinFET and GAA NW Technologies. IRPS 2019: 1-7 - [c7]Geert Hellings, Philippe Roussel, Nian Wang, Roman Boschke, Shih-Hung Chen, Marko Simicic, Mirko Scholz, Soeren Stoedel, Kris Myny, Dimitri Linten, Paul Hellings, Nowab Reza M. D. Ashif:
Concise Analytical Expression for Wunsch-Bell 1-D Pulsed Heating and Applications in ESD Using TLP. IRPS 2019: 1-6 - 2018
- [j2]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser:
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81: 186-194 (2018) - [j1]Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser:
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85: 49-65 (2018) - [c6]Bertrand Parvais, Geert Hellings, Marko Simicic, Pieter Weckx, Jérôme Mitard, Doyoung Jang, V. Deshpande, B. van Liempc, Anabela Veloso, A. Vandooren, Niamh Waldron, Piet Wambacq, Nadine Collaert, Diederik Verkest:
Scaling CMOS beyond Si FinFET: an analog/RF perspective. ESSDERC 2018: 158-161 - [c5]Marko Simicic, Geert Hellings, Shih-Hung Chen, Naoto Horiguchi, Dimitri Linten:
ESD diodes with Si/SiGe superlattice I/O finFET architecture in a vertically stacked horizontal nanowire technology. ESSDERC 2018: 194-197 - [c4]Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Kai-Hsin Chuang, Jacopo Franco, Marko Simicic, Pieter Weckx, Dimitri Linten:
Self-heating-aware CMOS reliability characterization using degradation maps. IRPS 2018: 2 - 2015
- [c3]Pieter Weckx, Ben Kaczer, Praveen Raghavan, Jacopo Franco, Marko Simicic, Philippe J. Roussel, Dimitri Linten, Aaron Thean, Diederik Verkest, Francky Catthoor, Guido Groeseneken:
Characterization and simulation methodology for time-dependent variability in advanced technologies. CICC 2015: 1-8 - [c2]Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marko Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov:
Experimental evidences and simulations of trap generation along a percolation path. ESSDERC 2015: 226-229 - [c1]Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marko Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov:
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. ESSDERC 2015: 238-241
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