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ORCIDMelanie Brocard
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2010 – 2019
- 2017
[j1]Reda Boumchedda
, Jean-Philippe Noel, Bastien Giraud, Kaya Can Akyel, Melanie Brocard, David Turgis, Edith Beigné:
High-Density 4T SRAM Bitcell in 14-nm 3-D CoolCube Technology Exploiting Assist Techniques. IEEE Trans. Very Large Scale Integr. Syst. 25(8): 2296-2306 (2017)- [c7]Melanie Brocard, Benoît Mathieu, Jean-Philippe Colonna, Cristiano Santos, Claire Fenouillet-Béranger, Cao-Minh Vincent Lu, Gerald Cibrario, Laurent Brunet, Perrine Batude, François Andrieu, Sébastien Thuries, Olivier Billoint:
Transistor Temperature Deviation Analysis in Monolithic 3D Standard Cells. ISVLSI 2017: 539-544 - 2016
- [c6]Guillaume Berhault, Melanie Brocard, Sébastien Thuries, François Galea, Lilia Zaourar:
3DIP: An iterative partitioning tool for monolithic 3D IC. 3DIC 2016: 1-5 - [c5]Melanie Brocard, Guillaume Berhault, Sébastien Thuries, Fabien Clermidy, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, François Andrieu, Fabien Deprat, Joris Lacord, Olivier Rozeau, Gerald Cibrario, Olivier Billoint:
Impact of intermediate BEOL technology on standard cell performances of 3D VLSI. ESSDERC 2016: 218-221 - [c4]Maud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, Vincent Mazzocchi, Cao-Minh Vincent Lu, Fabien Deprat, Jessy Micout, Bernard Previtali, Paul Besombes, Nils Rambal, François Andrieu, Olivier Billoint, Melanie Brocard, Sébastien Thuries, Guillaume Berhault, Cristiano Lopes Dos Santos, Gerald Cibrario, Fabien Clermidy, Daniel Gitlin, Olivier Faynot:
Opportunities brought by sequential 3D CoolCube™ integration. ESSDERC 2016: 226-229 - [c3]Claire Fenouillet-Béranger, Perrine Batude, Laurent Brunet, Vincent Mazzocchi, Cao-Minh Vincent Lu, Fabien Deprat, Jessy Micout, M.-P. Samson, Bernard Previtali, Paul Besombes, Nils Rambal, François Andrieu, Olivier Billoint, Melanie Brocard, Sébastien Thuries, Gerald Cibrario, Maud Vinet:
Recent advances in 3D VLSI integration. ICICDT 2016: 1-4 - 2013
- [c2]Melanie Brocard, Cédric Bermond, Thierry Lacrevaz, Alexis Farcy, Patrick Le Maitre, P. Scheer, Patrick Leduc, Séverine Cheramy, Bernard Fléchet:
RF characterization of substrate coupling between TSV and MOS transistors in 3D integrated circuits. 3DIC 2013: 1-8 - 2012
- [c1]Patrick Le Maitre, Melanie Brocard, Alexis Farcy, Jean-Claude Marin:
Device and electromagnetic co-simulation of TSV: Substrate noise study and compact modeling of a TSV in a matrix. ISQED 2012: 404-411
Coauthor Index
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