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ORCIDMicroelectronics Journal, Volume 130
Volume 130, December 2022
- Xinlong Shi
, Huiyong Hu, Ying Wang, Liming Wang, Ningning Zhang, Bin Wang, Maolong Yang, Lingyao Meng:
A comparative study on performance of junctionless Bulk SiGe and Si FinFET. 105537 - Kaushal Kumar, Subhash Chander Sharma:
Impact of band gap and gate dielectric engineering on novel Si0.1Ge0.9-GaAs lateral N-type charge plasma based JLTFET. 105610 - Chenghao Zhang, Jiangbo Wei, Yihang Yang, Maliang Liu:
A 12-bit 1.25 GS/s RF sampling pipelined ADC using a bandwidth-expanded residue amplifier with bias-free gain-boost technique. 105611 - Lie Li, Yigang He, Bolun Du:
Measurement method of the IGBT chip temperature fluctuation based on electrothermal model derivation. 105613 - Yufang Lu, Zhiai Huang, Chunhai Chen, Haihua Tang, Lei Shi, Yiqi Zhuang:
Design and implementation of LTCC coreless transformers for intelligent solid-state switch. 105614 - Shraddha Pali, Ankur Gupta:
High-k field plate DeNMOS design for enhanced performance and electrothermal SOA in switching applications. 105615 - Dong Fang, Guang Yang, Ming Qiao, Kui Xiao, Xiangyu Yang, Zheng Bian, Bo Zhang:
Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region. 105616 - Toushik Santra, Ankit Dixit, Rajeewa Kumar Jaisawal, Sunil Rathore, Saheli Sarkhel, Navjeet Bagga:
Investigation of geometrical impact on a P+ buried negative capacitance SOI FET. 105617 - Xiaowei Zhang, Fuyue Qian, Jianxiong Xi, Tao Wang, Lenian He:
A 16-bit 2.5-MS/s SAR ADC with on-chip foreground calibration. 105618 - Ming Qiao, Tao Ma, Shida Dong, Zhengkang Wang, Shuhao Zhang, Zhaoji Li, Bo Zhang:
A low gate charge field-plate trench MOSFET with hollow split gate structure. 105627 - Mingche Lai, Geng Zhang, Fangxu Lv, Xuqiang Zheng, Heming Wang, Dongbin Lv, Chaolong Xu, Xingyun Qi:
A 33.33 Gb/s/wire pin-efficient 1.06 pJ/bit wireline transceiver based on CNRZ-5 for Chiplet in 28 nm CMOS. 105628 - Rajesh Saha, Rupam Goswami, Deepak Kumar Panda:
Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET. 105629 - Jie Yang, Junxian Zhu:
A silicon carbide high gain differential amplifier for extreme temperature applications. 105632 - Z. Khoshkam, Adib Abrishamifar:
A very low-power discrete-time delta-sigma modulator for wireless body area network. 105633 - J. Ajayan, D. Nirmal, Binola K. Jebalin, S. Sreejith:
Advances in neuromorphic devices for the hardware implementation of neuromorphic computing systems for future artificial intelligence applications: A critical review. 105634 - Honglin Xu, Hao Zhang, Junjie Wu:
A 28V NMOS power switch and bootstrap driver with integrated PA gate driver. 105637 - Sudha Kumari, Suresh Durai, Anbarasu Manivannan:
Impact of process-induced variability on multi-bit phase change memory devices. 105638 - Kai-Kai Wu, Hongyi Wang, Chen Chen, Tao Tao:
An ultra-low-power highly integrated novel one-cell battery management chip for wearables. 105640
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