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2020 – today
- 2024
[j9]Sungjoon Kim
, Kyungho Hong, Hyungjin Kim, Min-Hwi Kim, Woo Young Choi:
Overshoot-Suppressed Memristor Array with AlN Oxygen Barrier for Low-Power Operation in the Intelligent Neuromorphic Systems. Adv. Intell. Syst. 6(8) (2024)- [j8]Misbaudeen Aderemi Adesanya, Hammed Obasekore, Anis Rabiu, Wook-Ho Na, Qazeem Opeyemi Ogunlowo, Timothy Denen Akpenpuun, Min-Hwi Kim, Hyeon-Tae Kim, Bo-Yeong Kang, Hyun-Woo Lee:
Deep reinforcement learning for PID parameter tuning in greenhouse HVAC system energy Optimization: A TRNSYS-Python cosimulation approach. Expert Syst. Appl. 252: 124126 (2024) - 2023
- [j7]Sungjun Oh, Hyungjin Kim, Seong Eun Kim, Min-Hwi Kim, Hea-Lim Park, Sin-Hyung Lee:
Biodegradable and Flexible Polymer-Based Memristor Possessing Optimized Synaptic Plasticity for Eco-Friendly Wearable Neural Networks with High Energy Efficiency. Adv. Intell. Syst. 5(5) (2023) - 2022
- [j6]Min-Hwi Kim, Sin-Hyung Lee, Sungjun Kim, Byung-Gook Park:
A Fast Weight Transfer Method for Real-Time Online Learning in RRAM-Based Neuromorphic System. IEEE Access 10: 37030-37038 (2022) - [j5]Seong Eun Kim, Min-Hwi Kim, Jisu Jang, Hyungjin Kim, Sungjun Kim, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, Sin-Hyung Lee:
Systematic Engineering of Metal Ion Injection in Memristors for Complex Neuromorphic Computing with High Energy Efficiency. Adv. Intell. Syst. 4(9) (2022) - 2020
- [j4]Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park:
Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation. IEEE Access 8: 228720-228730 (2020)
2010 – 2019
- 2019
- [j3]Chandreswar Mahata, Wonwoo Kim, Shiwhan Kim, Muhammad Ismail, Min-Hwi Kim, Sungjun Kim, Byung-Gook Park:
Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices. IEICE Electron. Express 16(16): 20190404 (2019) - 2016
- [j2]Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park:
Bias Polarity Dependent Resistive Switching Behaviors in Silicon Nitride-Based Memory Cell. IEICE Trans. Electron. 99-C(5): 547-550 (2016) - 2015
- [j1]Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park:
Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals. IEICE Trans. Electron. 98-C(5): 429-433 (2015)
Coauthor Index
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