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Bomy Chen
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2010 – 2019
- 2019
- [j11]Jipeng Guo, Haibo Wang, Weiliang Jing, Haixin Li, Yuan Du, Zhitang Song, Bomy Chen:
Subsystem under 3D-Storage Class Memory on a chip. Comput. Electr. Eng. 74: 47-58 (2019) - 2017
- [j10]Yuan Du, Yong Ye, Weiliang Jing, Zhenhua Li, Xiaoyun Li, Zhitang Song, Bomy Chen:
Multi-core architecture with asynchronous clocks to prevent power analysis attacks. IEICE Electron. Express 14(4): 20161220 (2017) - [j9]Yong Ye, Yuan Du, Weiliang Jing, Xiaoyun Li, Zhitang Song, Bomy Chen:
CAM-based retention-aware DRAM (CRA-DRAM) for refresh power reduction. IEICE Electron. Express 14(10): 20170053 (2017) - [j8]Yong Ye, Yuan Du, Weiliang Jing, Xiaoyun Li, Zhitang Song, Bomy Chen:
Erratum: CAM-based retention-aware DRAM (CRA-DRAM) for refresh power reduction [IEICE Electronics Express Vol. 14 (2017) No. 10 pp. 20170053]. IEICE Electron. Express 14(11): 20178001 (2017) - [j7]Yuan Du, Yong Ye, Weiliang Jing, Xiaoyun Li, Zhitang Song, Bomy Chen:
Logic area reduction using the deep trench isolation technique based on 40 nm embedded PCM process. IEICE Electron. Express 14(15): 20170628 (2017) - [j6]Weiliang Jing, Kai Yang, Yinyin Lin, Beomseop Lee, Sangkyu Yoon, Yong Ye, Yuan Du, Bomy Chen:
Retention-Aware Hybrid Main Memory (RAHMM): Big DRAM and Little SCM. IEEE Trans. Computers 66(5): 912-918 (2017) - 2016
- [j5]Gezi Li, Xiaogang Chen, Bomy Chen, Shunfen Li, Mi Zhou, Wenbing Han, Xiaoyun Li, Zhitang Song:
An FPGA enhanced extensible and parallel query storage system for emerging NVRAM. IEICE Electron. Express 13(4): 20151109 (2016) - [j4]Yong Ye, Yong Kang, Chao Zhang, Yipeng Chan, Hanming Wu, Shiuhwuu Lee, Zhitang Song, Bomy Chen:
A 40-nm 16-Mb Contact-Programming Mask ROM Using Dual Trench Isolation Diode Bitcell. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1333-1341 (2016)
2000 – 2009
- 2007
- [j3]Yang Hong, Yinyin Lin, Tingao Tang, Bomy Chen:
Multilevel Storage in Phase-Change Memory. IEICE Trans. Electron. 90-C(3): 634-640 (2007) - 2006
- [j2]Feifei Liao, Yiqing Ding, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bomy Chen:
Characterization of Ge2Sb2Te5 thin film transistor and its application in non-volatile memory. Microelectron. J. 37(8): 841-844 (2006) - [j1]Hangbing Lv, Peng Zhou, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bingchu Cai, Bomy Chen:
Electronic properties of GST for non-volatile memory. Microelectron. J. 37(9): 982-984 (2006)
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