"Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable ..."

Hang-Ah Park et al. (2024)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631433

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

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Hang-Ah Park, Sejun Park, Min-Tai Yu, Ye-Chan Kim, Cheon Ho Park, Jung Hoon Lee, Jun Eon Jin, Dawoon Jeung, Hauk Han, Tai-Soo Lim, Min-Kyu Jeong, Mincheol Park, Bong-Tae Park, Sunghoi Hur:
Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable Cell Characteristics for 8th Generation 512Gb 3D NAND Flash Memory. VLSI Technology and Circuits 2024: 1-2

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