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2010 – 2019
- 2019
[j9]Yuki Yamashita, Steve Stoffels
, Niels Posthuma, Karen Geens, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi:
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process. IEICE Electron. Express 16(22): 20190516 (2019)- [c4]Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka:
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS 2019: 1-10 - 2018
- [j8]Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso:
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. Microelectron. Reliab. 88-90: 584-588 (2018) - 2017
- [j7]Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni:
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. 76-77: 298-303 (2017) - [j6]Ales Chvála, Juraj Marek, Patrik Pribytny, Alexander Satka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval:
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. Microelectron. Reliab. 78: 148-155 (2017) - 2016
- [j5]Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58: 151-157 (2016) - [j4]Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni:
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. 64: 547-551 (2016) - [c3]Vice Sodan, Federica Lidia Teresa Maggioni, Herman Oprins, Steve Stoffels, Martine Baelmans, Ingrid De Wolf:
New fast distributed thermal model for analysis of GaN based power devices. ESSDERC 2016: 172-175 - 2015
- [c2]Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs:
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS 2015: 6 - 2014
- [j3]Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere:
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. 54(9-10): 2196-2199 (2014) - [j2]Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere:
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. Microelectron. Reliab. 54(9-10): 2232-2236 (2014) - [c1]Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso:
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC 2014: 377-380 - 2012
- [j1]Denis Marcon, John Viaene, Paola Favia, Hugo Bender, Xuanwu Kang, Silvia Lenci, Steve Stoffels, Stefaan Decoutere:
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. Microelectron. Reliab. 52(9-10): 2188-2193 (2012)
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