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ORCIDTanya Nigam
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2020 – today
- 2022
[c14]Wen Liu, Dimitris P. Ioannou, Johnatan Kantarovsky, Byoung Min, Tanya Nigam:
Robust Off-State TDDB Reliability of n-LDMOS. IRPS 2022: 26-1- [c13]Salvatore Cimino, J. Singh, Jeffrey B. Johnson, W. Zheng, Y. Chen, W. Liu, P. Srinivasan, O. Gonzales, M. Hauser, Matthew Koskinen, K. Nagahiro, Y. Liu, B. Min, Tanya Nigam, N. Squib:
Optimized LDMOS Offering for Power Management and RF Applications. IRPS 2022: 57-1 - 2021
- [c12]Maria Toledano-Luque, Peter C. Paliwoda, Mohamed Nour, Thomas Kauerauf, Byoung Min, Germain Bossu, Mahesh Siddabathula, Tanya Nigam:
Off-state TDDB in FinFET Technology and its Implication for Safe Operating Area. IRPS 2021: 1-6 - 2020
- [c11]Wafa Arfaoui, Germain Bossu, A. Muehlhoff, D. Lipp, R. Manuwald, T. Chen, Tanya Nigam, Mahesh Siddabathula:
A Novel HCI Reliability Model for RF/mmWave Applications in FDSOI Technology. IRPS 2020: 1-5 - [c10]Peter C. Paliwoda, Maria Toledano-Luque, Tanya Nigam, Fernando Guarin, M. Nour, S. Cimino, L. Pantisano, A. Gupta, Oscar Huerta-Gonzalez, M. Hauser, W. Liu, A. Vayshenker, D. Ioannou, D. Lee, L. Jiang, P. Yee, Stewart E. Rauch
, B. Min:
Self-heating characterization and its applications in technology development. NATW 2020: 1-7
2010 – 2019
- 2019
- [c9]M. Iqbal Mahmud, Amit Gupta, Maria Toledano-Luque, N. Rao Mavilla, Jeffrey B. Johnson, P. Srinivasan, A. Zainuddin, S. Rao, Salvatore Cimino, Byoung Min, Tanya Nigam:
Hot Carrier Reliability Improvement of Thicker Gate Oxide nFET Devices in Advanced FinFETs. IRPS 2019: 1-6 - 2018
- [j2]Andreas Kerber, Tanya Nigam:
Bias temperature instability in scaled CMOS technologies: A circuit perspective. Microelectron. Reliab. 81: 31-40 (2018) - [c8]P. Srinivasan, Rakesh Ranjan, S. Cimino, A. Zainuddin, B. Kannan, L. Pantisano, I. Mahmud, G. Dilliway, Tanya Nigam:
Understanding gate metal work function (mWF) impact on device reliability - A holistic approach. IRPS 2018: 6 - 2017
- [c7]Tanya Nigam, Andreas Kerber, Tian Shen, Rakesh Ranjan, Linjun Cao:
Material and device innovation impact on reliability for scaled CMOS technologies. ESSDERC 2017: 134-139 - 2015
- [c6]Yoann Mamy Randriamihaja, William McMahon, S. Balasubramanian, Tanya Nigam, Biju Parameshwaran, Randy W. Mann, Torsten Klick, T. Schaefer, A. Kumar, Y. Song, Vivek Joshi, Rakesh Ranjan, F. Chen:
Assessing intrinsic and extrinsic end-of-life risk using functional SRAM wafer level testing. IRPS 2015: 6 - [c5]Tanya Nigam, Andreas Kerber:
Enabling Scaling of Advanced CMOS Technologies: A Reliability Perspective. ISVLSI 2015: 199 - 2014
- [c4]S. Balasubramanian, Vivek Joshi, Torsten Klick, Randy W. Mann, Joseph Versaggi, Akhilesh Gautam, C. Weintraub, G. Kurz, G. Krause, Andreas Kerber, Biju Parameshwaran, Tanya Nigam:
HTOL SRAM Vmin shift considerations in scaled HKMG technologies. CICC 2014: 1-4 - [c3]Tanya Nigam, Andreas Kerber:
Reliability modeling of HK MG technologies. CICC 2014: 1-8 - 2013
- [c2]Tanya Nigam:
CMOS reliability: From discrete device degradation to circuit aging. VLSI-DAT 2013: 1
2000 – 2009
- 2009
- [c1]Tanya Nigam:
Impact of Transistor Level degradation on product reliability. CICC 2009: 431-438
1990 – 1999
- 1999
- [j1]Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke:
Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. 43(3): 339-350 (1999)
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