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2020 – today
- 2024
[c1]A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier:
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. IRPS 2024: 4
2000 – 2009
- 2009
- [j8]Grégory Avenier, Malick Diop, Pascal Chevalier
, Germaine Troillard, Nicolas Loubet, Julien Bouvier, Linda Depoyan, Nicolas Derrier, Michel Buczko, Cédric Leyris, Samuel Boret, Sébastien Montusclat, Alain Margain, Sébastien Pruvost, Sean T. Nicolson, Kenneth H. K. Yau, Nathalie Revil, Daniel Gloria, Didier Dutartre, Sorin P. Voinigescu, Alain Chantre:
0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications. IEEE J. Solid State Circuits 44(9): 2312-2321 (2009) - 2008
- [j7]Malick Diop, Nathalie Revil, M. Marin, Frederic Monsieur, Pascal Chevalier, Gérard Ghibaudo:
Impact of inside spacer process on fully self-aligned 250 GHz SiGe: C HBTs reliability performances: a-Si vs. nitride. Microelectron. Reliab. 48(8-9): 1198-1201 (2008) - 2005
- [j6]Vincent Huard, Mickael Denais, F. Perrier, Nathalie Revil, C. R. Parthasarathy, Alain Bravaix, E. Vincent:
A thorough investigation of MOSFETs NBTI degradation. Microelectron. Reliab. 45(1): 83-98 (2005) - [j5]Alain Bravaix, Didier Goguenheim, Mickael Denais, Vincent Huard, C. R. Parthasarathy, F. Perrier, Nathalie Revil, E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. Microelectron. Reliab. 45(9-11): 1370-1375 (2005) - 2004
- [j4]Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent:
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. Microelectron. Reliab. 44(1): 65-77 (2004) - 2003
- [j3]Alain Bravaix, C. Trapes, Didier Goguenheim, Nathalie Revil, E. Vincent:
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. Microelectron. Reliab. 43(8): 1241-1246 (2003) - 2001
- [j2]Nathalie Revil, Xavier Garros:
Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications. Microelectron. Reliab. 41(9-10): 1307-1312 (2001) - [j1]Alain Bravaix, Didier Goguenheim, Nathalie Revil, E. Vincent:
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. Microelectron. Reliab. 41(9-10): 1313-1318 (2001)
Coauthor Index
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