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Organic nonvolatile memory devices based on ferroelectricity.

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Affiliations

  • 1. ECN Solar Energy 1755 ZG Petten, The Netherlands.
      Authors
    • Naber RC 1
    (1 author)

ORCIDs linked to this article

Advanced Materials (Deerfield Beach, Fla.), 01 Mar 2010, 22(9):933-945
https://doi.org/10.1002/adma.200900759 PMID: 20217816 

Review

Abstract 

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.

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Read article at publisher's site: https://doi.org/10.1002/adma.200900759

Read article for free, from open access legal sources, via Unpaywall: https://pure.rug.nl/ws/files/6743791/2010AdvMaterNaber.pdfUnpaywall

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Funding 

Funders who supported this work.

European Commission FP7 (1)