AUTHORID:0000-0002-3987-1132 - Search results

Results for Can Bayram

0000-0002-3987-1132
University of Illinois at Urbana-Champaign

6
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80
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Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory.
Tsai YC, Bayram C
ACS Omega, 5(8):3917-3923, 30 Jan 2020
Cited by: 3 articles | PMID: 32149218 | PMCID: PMC7057329
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Structural and Electronic Properties of Hexagonal and Cubic Phase AlGaInN Alloys Investigated Using First Principles Calculations.
Tsai YC, Bayram C
Sci Rep, 9(1):6583, 29 Apr 2019
Cited by: 3 articles | PMID: 31036851 | PMCID: PMC6488601
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Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure.
Park K, Mohamed A, Dutta M, Stroscio MA, Bayram C
Sci Rep, 8(1):15947, 29 Oct 2018
Cited by: 3 articles | PMID: 30374108 | PMCID: PMC6206000
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High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100).
Liu R, Schaller R, Chen CQ, Bayram C
ACS Photonics, 5(3):955-963, 08 Jan 2018
Cited by: 3 articles | PMID: 30775407 | PMCID: PMC6376204
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Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene.
Kim J, Bayram C, Park H, Cheng CW, Dimitrakopoulos C, Ott JA, Reuter KB, Bedell SW, Sadana DK
Nat Commun, 5:4836, 11 Sep 2014
Cited by: 55 articles | PMID: 25208642
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Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.
Lee HP, Perozek J, Rosario LD, Bayram C
Sci Rep, 6:37588, 21 Nov 2016
Cited by: 12 articles | PMID: 27869222 | PMCID: PMC5116587
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1-6 of 6 results

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Results for Can Bayram

Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory.

Structural and Electronic Properties of Hexagonal and Cubic Phase AlGaInN Alloys Investigated Using First Principles Calculations.

Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure.

High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100).

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene.

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations.

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