The optimized memory allows 16-ns random access time and 5-Mbit/s write throughput from −40 °C to 175 °C, with 100 kcycle endurance. The sense amplifier, the ...
2-Mb Embedded Phase Change Memory With 16-ns Read Access ...
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A 2-Mb embedded phase change memory (ePCM) macrocell designed in 90-nm BJT-CMOS-DMOS (BCD) technology able to address the next generation of automotive and ...
An embedded phase change memory (ePCM) macrocell was designed in 90-nm BJT-CMOS-DMOS (BCD) technology to address power application needs and face process ...
This paper presents a 16 Mb embedded phase change memory macro based on a 90 nm 6ML technology. The memory macro consists of two logical banks. The major ...
A 2-Mb embedded phase change memory (ePCM) macrocell designed in 90-nm BJT-CMOS-DMOS (BCD) technology able to address the next generation of automotive and ...
The optimized memory allows 16-ns random access time and 5-Mbit/s write throughput from -40 °C to 175 °C, with 100 kcycle endurance. The sense amplifier, the ...
2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications · Zuliani, P.
2-Mb embedded phase change memory with 16-ns read access time and 5-Mb/s write throughput in 90-nm BCD technology for automotive applications. M Carissimi, R ...
2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications.
2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications. In ...