CMOS processes enable RF front-end circuits to integrate with baseband circuits at a much lower cost, but their low f max degrades power-amplifier (PA) ...
This work is the only endfire on-chip antenna implemented using a standard CMOS process with less than 0.5λ 0 ×0.5λ 0 dimension, making it suitable for slat ...
Feb 21, 2024 · This paper presents a 300GHz-band 16×4-element amplifier-last phased-array TX. Each chip integrates 4 TX elements in 65nm CMOS, and each TX ...
24.3 A 236-to-266GHz 4-Element Amplifier-Last Phased-Array Transmitter in 65nm CMOS · Chun Wang, Hans Herdian, +16 authors. Kenichi Okada · Published in IEEE ...
24.3 A 236-to-266GHz 4-Element Amplifier-Last Phased-Array Transmitter in 65nm CMOS · Chun Wang, Hans Herdian, +16 authors. Kenichi Okada · Published in IEEE ...
24.3 A 236-to-266GHz 4-Element Amplifier-Last Phased-Array Transmitter in 65nm CMOS. C. Wang, H. Herdian, W. Zheng, C. Liu, J. Mayeda, Y. Liu, O. Yong, W. Wang ...
Article "24.3 A 236-to-266GHz 4-Element Amplifier-Last Phased-Array Transmitter in 65nm CMOS" Detailed information of the J-GLOBAL is an information service ...
May 29, 2024 · In Paper 24.3, Tokyo Institute of Technology and NTT demonstrate a 236-to-266GHz 4-element 1-D phased-array transmitter using an amplifier-last ...
Feb 19, 2024 · New phased-array transmitter design overcomes common problems of CMOS technology in the 300 GHz band, as reported by scientists from Tokyo Tech.
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24.2 A Scalable 134-to-141GHz 16-Element CMOS 2D λ/2-Spaced Phased. Array. J ... 24.3 A 236-to-266GHz 4-Element Amplifier-Last Phased-Array Transmitter in.