Feb 5, 2024 · This work presents a programmable logic-in-memory (PLIM) architecture based on 22nm Fully Depleted Silicon on Insulator (FD-SOI) technology.

A digital trigger module for high-resolution nuclear spectroscopy, composed of three filters operating in parallel and a resolver, is introduced.

A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology. Yihe Liu, Junjie Wang, Shuang Liu, Mingyuan Sun, ...

Article "A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology" Detailed information of the J-GLOBAL is an ...

A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology · Conference Paper. February 2024. ·. 3 Reads. Yihe Liu.

A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology. CECCT 2023: 236-240. [c3]. view. electronic edition ...

A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology · Engineering, Computer Science. CECCT · 2023.

This article reports on the characterization and analysis of 22 nm FD-SOI CMOS technology-based charge trap transistors (CTT) and their application in neural ...

A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology · Engineering, Computer Science. CECCT · 2023.

This process combines a characteristic minimum gate length of 22 nm and a. FD-SOI (Fully Depleted Silicon-On-Insulator) multi- layered structure. These ...