This study is focused on integrating the impact of well contacts with bias-dependent SE compact model for circuit-level prediction. We aim to discuss the ...
Sep 9, 2024 · This paper reports a revised method to integrate the impact of well contacts on SEE response with the bias-dependent SE compact model for ...
With technology scaling, a common and efficient strategy to improve the soft error vulnerability of sensitive nodes is to place well/substrate contacts ...
Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model. Autores: Lili Ding, Wei Chen, Hongxia Guo, Tan Wang, ...
A single-event model capable of capturing bias- dependent effects has been developed and integrated into the BSIM4 transistor model and a 90 nm CMOS process ...
Missing: contacts | Show results with:contacts
Oct 22, 2024 · A single-event model capable of capturing bias- dependent effects has been developed and integrated into the BSIM4 transistor model and a 90 nm ...
Modeling the impact of well contacts on SEE response with bias-dependent Single-Event compact model · L. DingWei Chen +5 authors. Xiaoyu Pan. Engineering.
Circuit level simulation is to directly introduce radiation effects terms into the common compact model. ... Secondly, bias dependent model could be produced.
May 31, 2019 · In this work, the following models are given for characterizing single-event upsets and transients given that circuits operate at lower biases.
Techniques for mitigating single-event upset are described, as well as methods for predicting device and circuit single-event response using computer ...