Jun 1, 2020 · Bit-level rewrites can remove error bits at bit-level granularity, shorten the error correction latency, and boost the read performance.

Based on the success of bit-alterable 3D NAND flash, this study observes that utilizing bit-level operations to remove error bits on flash memory reveals the ...

Bit-level rewrite is predicted to be highly beneficial to the performance of the densely-packed, bit-error-prone 3D NAND flash because bit-level rewrites can ...

Dive into the research topics of 'Optimizing Lifetime Capacity and Read Performance of Bit-Alterable 3-D NAND Flash'. Together they form a unique fingerprint.

Dive into the research topics of 'Optimizing Lifetime Capacity and Read Performance of Bit-Alterable 3-D NAND Flash'. Together they form a unique fingerprint.

Optimizing Lifetime Capacity and Read Performance of Bit-Alterable 3-D NAND Flash · The Best of BothWorlds: On Exploiting Bit-Alterable NAND Flash for Lifetime ...

Bit-level rewrite is predicted to be highly beneficial to the performance of the densely-packed, bit-error-prone 3D NAND flash because bit-level rewrites can ...

Jun 2, 2019 · With the emergence of bit-alterable 3D NAND flash, programming and erasing a flash cell at bit-level granularity have become a reality.

Sep 26, 2024 · The study focuses on understanding how grain size, channel thickness, and trap density influence electron behavior to enhance memory chip efficiency.

Optimizing Lifetime Capacity and Read Performance of Bit-Alterable 3-D NAND Flash ... Bit-Alterable NAND Flash for Lifetime and Read Performance Optimization.