Dark current (physics): Difference between revisions
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In [[physics]] and in [[electronic engineering]], '''dark current''' is the relatively small [[electric current]] that flows through [[photodetector|photosensitive devices]] such as a [[photomultiplier tube]], [[photodiode]], or [[charge-coupled device]] even when no [[photon]]s enter the device; it consists of the charges generated in the detector when no outside radiation is entering the detector. It is referred to as [[reverse bias]] [[leakage current]] in non-optical devices and is present in all [[diode]]s. Physically, dark current is due to the random generation of [[electron]]s and [[electron hole|holes]] within the [[depletion region]] of the device. |
{{Short description|Weak electric current generated by photosensitive devices in pure darkness}}In [[physics]] and in [[electronic engineering]], '''dark current''' is the relatively small [[electric current]] that flows through [[photodetector|photosensitive devices]] such as a [[photomultiplier tube]], [[photodiode]], or [[charge-coupled device]] even when no [[photon]]s enter the device; it consists of the charges generated in the detector when no outside radiation is entering the detector. It is referred to as [[reverse bias]] [[leakage current]] in non-optical devices and is present in all [[diode]]s. Physically, dark current is due to the random generation of [[electron]]s and [[electron hole|holes]] within the [[depletion region]] of the device.<ref>{{Cite journal |last=Allam |first=J. |last2=Capasso |first2=F. |last3=Alavi |first3=K. |last4=Cho |first4=A.Y. |date=January 1987 |title=Near-single carrier-type multiplication in a multiple graded-well structure for a solid-state photomultiplier |url=https://ieeexplore.ieee.org/document/1487081/ |journal=[[IEEE Electron Device Letters]] |volume=8 |issue=1 |pages=4–6 |doi=10.1109/EDL.1987.26531 |issn=0741-3106}}</ref> |
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The charge generation rate is related to specific [[crystallographic defect]]s within the depletion region. Dark-current [[spectroscopy]] can be used to determine the defects present by monitoring the peaks in the dark current histogram's evolution with temperature. |
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Dark current is one of the main sources for noise in [[image sensor]]s such as charge-coupled devices. The pattern of different dark currents can result in a [[fixed-pattern noise]]; [[dark frame subtraction]] can remove an estimate of the mean fixed pattern, but there still remains a temporal noise, because the dark current itself has a [[shot noise]]. |
Dark current is one of the main sources for noise in [[image sensor]]s such as charge-coupled devices. The pattern of different dark currents can result in a [[fixed-pattern noise]]; [[dark frame subtraction]] can remove an estimate of the mean fixed pattern, but there still remains a temporal noise, because the dark current itself has a [[shot noise]]. |
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This dark current is the same that is studied in PN-Junction studies. |
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==References== |
==References== |
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Latest revision as of 03:24, 31 July 2024
 | This article relies largely or entirely on a single source. (January 2024) |
In physics and in electronic engineering, dark current is the relatively small electric current that flows through photosensitive devices such as a photomultiplier tube, photodiode, or charge-coupled device even when no photons enter the device; it consists of the charges generated in the detector when no outside radiation is entering the detector. It is referred to as reverse bias leakage current in non-optical devices and is present in all diodes. Physically, dark current is due to the random generation of electrons and holes within the depletion region of the device.[1]
Dark current is one of the main sources for noise in image sensors such as charge-coupled devices. The pattern of different dark currents can result in a fixed-pattern noise; dark frame subtraction can remove an estimate of the mean fixed pattern, but there still remains a temporal noise, because the dark current itself has a shot noise.
References
[edit]- ^ Allam, J.; Capasso, F.; Alavi, K.; Cho, A.Y. (January 1987). "Near-single carrier-type multiplication in a multiple graded-well structure for a solid-state photomultiplier". IEEE Electron Device Letters. 8 (1): 4–6. doi:10.1109/EDL.1987.26531. ISSN 0741-3106.
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