http://rdf.ncbi.nlm.nih.gov/pubchem/patent/AU-2009228841-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b84a2e2bcc8c875734733c2afe72fe1 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-06 |
filingDate | 2009-03-12^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20420a79f7df1a72e5c6811777a7efef |
publicationDate | 2009-10-01^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | AU-2009228841-A1 |
titleOfInvention | Epitaxial growth on low degree off-axis silicon carbide substrates and semiconductor devices made thereby |
priorityDate | 2008-03-26^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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