| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4e5af887ce5da370d1c2b840f9b51f1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b312503d5fb78f9d7d78c88940a1558c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2201-3423 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-108 |
| filingDate |
1991-03-14^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f6e5a3d6d8bf6a2e51f4ad2cdc0c62d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b71923c72752199b3f056ca06b932667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cc954775885ee04a8484a94f7c09fe1 |
| publicationDate |
1991-09-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2038262-A1 |
| titleOfInvention |
Transferred electron iii-v semiconductor photocathode |
| abstract |
An improved transferred electron III-V semiconductor photocathode comprising an aluminum contact pad and an aluminum grid structure that improves quantum efficiency by removing a major obstacle to electrons escaping into the vacuum and controls dark spot blooming caused by overly bright photon emission sources. |
| priorityDate |
1990-03-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |