http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2101559-A1

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Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cbd2c5567dc40b3f9236d2b8b5937b29
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-356113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-0948
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-0948
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K3-356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-096
filingDate 1992-01-31^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe7ebb0075b9cb936d5500f8264612c0
publicationDate 1992-08-01^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-2101559-A1
titleOfInvention Complementary logic input parallel (clip) logic circuit family
abstract A high speed low capacitance Complementary Logic Input Parallel (CLIP) logic family includes an FET driving stage, a complementary FET inverter, and at least one gating FET. The dimensions of the gating FET are controlled relative to the dimensions of the driving stage FETs to provide a high speed logic circuit. AND and OR CLIP logic circuits may be provided. A clocked CLIP logic circuit may be provided by adding a clocking FET. A latching clocked CLIP logic circuit may also be provided by adding a latching FET. In the latching clocked CLIP logic circuit, the gate output is latched so that it does not change during the clock period regardless of changes in the logic inputs of the circuit. The speed of the CLIP logic circuits may be further increased by including germanium in the channel of its P-channel FETs to thereby increase carrier mobility in the P-channel FETs. The N-channel FETs are free of germanium. The internal capacitance of the CLIP logic circuits is also decreased by using common diffusion regions in the integrated circuit for pairs of driving stage FETs. Common source and/or common drain diffusion regions may be used.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0587753-A1
priorityDate 1991-01-31^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6326954
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523132

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