| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ebca25e4f737729fb927875476e58a9f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate |
2000-05-17^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-11-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b83b8d340d622a6cb4e0b8281319caea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9663134b2dfb55a769809b5e7330276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b539c2e3fc9501aa11b49563ab96f3f5 |
| publicationDate |
2009-11-03^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2376564-C |
| titleOfInvention |
Semi-insulating silicon carbide without vanadium domination |
| abstract |
A semi-insulating bulk single crystal of silicon carbide is disclosed that h as a resistivity of at least 5000 .OMEGA.-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention. |
| priorityDate |
1999-05-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |