| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a34d7d2e0d09a58cb7bf4a04c81162e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2874
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-005 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2863
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2872 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate |
2002-08-12^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3959ca978ff991b0b13953f7393dc32f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00727c84cc8a8f04ab923613b20620e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fea8a2cfca4ca020b9a3dc7d139e6136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b60bce196ef5db426a5046268a6d5430 |
| publicationDate |
2003-02-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2457675-A1 |
| titleOfInvention |
Providing current control over wafer borne semiconductor devices using trenches |
| abstract |
Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a substrate (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) form ed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems. |
| priorityDate |
2001-08-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |