http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2749724-C

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6c7abd1665a53282a4bcbc630cc7e70
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J2219-00078
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J19-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J15-00
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-035
filingDate 2009-10-09^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-11-08^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbafb3f05b3cd6a503191ee00b8df2f7
publicationDate 2016-11-08^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-2749724-C
titleOfInvention Reactor for producing polycrystalline silicon using the monosilane process
abstract A reactor (10) is disclosed for producing polycrystalline silicon, which reactor is provided with a reactor base plate (2) which has a multiplicity of nozzles (4) formed therein. A silicon-containing gas flows through the nozzles (4) . A plurality of filament rods (6) are likewise mounted on the reactor base plate (2). In addition, a gas outlet opening (8) for feeding used silicon-containing gas to an enrichment and/or treatment stage is provided. The gas outlet opening (8) is formed at a free end (21) of an inner tube (20), wherein the inner tube (20) is conducted through the reactor base plate (2).
priorityDate 2009-01-22^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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