| abstract |
The present invention relates to a kind of in order to the method for bond first copper on the second copper, comprise a step, its contact through element formed a rich oxygen containing crystallization layers of copper each first element and one second element each on the surface, the gross thickness of all layers is less than 6nm, described step comprises: a) at least one step, 1nm and hydrophilic surface is less than to obtain r.m.s. roughness in order to polished surface, b) at least one step, in order to suppress to clean described surface because of the major part that there is particle and corrosion inhibitor of polishing, c) at least one step, in order to place the oxygen containing crystallization layers of copper of all richnesses to contact with each other. |