http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103038880-B

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-58
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0753
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-075
filingDate 2011-07-22^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-11-24^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-11-24^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103038880-B
titleOfInvention Opto-electronic device
abstract The present invention relates to a kind of opto-electronic device(1), it is used for electromagnetic radiation of the mixing with different wave length particularly in far field.The opto-electronic device(1)Including carrier(2).In the carrier(2)It is provided with least one first semiconductor chip(3), first semiconductor chip(3)With the first radiation exit facet(13), for launching in the first spectral region(14)In electromagnetic radiation.In the carrier(2)It is provided with least one second semiconductor chip(4), second semiconductor chip(4)With the second radiation exit facet(17), for launching in the second spectral region(15)In electromagnetic radiation.In the semiconductor chip(3、4)Deviate from carrier(2)Radiation exit facet(13、17)It is provided with scattering layer(8).
priorityDate 2010-07-26^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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