http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103187436-B

Outgoing Links

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-432
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
filingDate 2012-04-27^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-10-05^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-10-05^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103187436-B
titleOfInvention HEMT and forming method thereof
abstract A kind of HEMT (HEMT), including an III V compounds of group layer.2nd III V compounds of group layer is arranged on above an III V compounds of group layer, and is different from an III V compounds of group layer in composition.Carrier channels is positioned between an III V compounds of group layer and the 2nd III V compounds of group layer.Source feature and drain feature are arranged on above the 2nd III V compounds of group layer.Above a part for the 2nd III V compounds of group layer that p-type layer is arranged between source feature and drain feature.Gate electrode is arranged on p-type layer.Gate electrode includes refractory metal.Depletion region is arranged in carrier channels and is positioned at below gate electrode.Additionally provide HEMT and forming method thereof.
priorityDate 2011-12-28^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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