http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103715269-B

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a62555ff12316a9a118542896b4c0af7
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1229
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
filingDate 2013-12-31^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-06-03^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3dafe13e07a195608e44f614733e077c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfc720503e74a65e9c5703bf204e1182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf60be902c8ec485c3697ac70e71341f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09b95defab9bbf3bb95ff3d976d67b93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d68330af7497cc859c4576be59519d96
publicationDate 2015-06-03^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-103715269-B
titleOfInvention Thin film transistor, array substrate and display device
abstract The invention provides a thin film transistor, an array substrate and a display device. The thin film transistor comprises a gate electrode, a gate insulating layer, an active layer, a source electrode and a leakage electrode, wherein the active layer comprises at least two semiconductor films, and the semiconductor films include at least one single crystal semiconductor film. By adopting the scheme, the current carrier migration rate of the thin film transistor can be improved.
priorityDate 2013-12-31^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14830
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559310
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5360835
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359967
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14806
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559192
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578761
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419548946

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