| abstract |
Embodiment of the present invention is provided for the method for the semiconductor devices of the layer comprising electropositive metal, the layer comprising one or more electropositive metals and the layer including containing one or more electropositive metals by ALD (atomic layer deposition) and/or the formation of CVD (chemical vapor deposition) technique.In the present embodiment, the layer is thin or ultra-thin (is less than Thick film) and/or be conformal film.The transistor device including metal layer, metal interconnecting piece and computing device are additionally provided with, the metal layer includes one or more electropositive metals. |