| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2012-10-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-02-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-02-15^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-103930996-B |
| titleOfInvention |
Semiconductor device |
| abstract |
A MOSFET (1) is provided with: a substrate (10) comprising silicon carbide, being open on one principal-surface (10A) side thereof, and having a trench (19) formed therein that has a sidewall surface (19A); a gate-insulating film (21) formed so as to be in contact with the top of the sidewall surface (19A); and a gate electrode (23) formed so as to be in contact with the top of the gate-insulating film (21). The surface roughness within a square region located on the sidewall surface (19A) and being 100nm in length on a side is 1.0nm RMS or less. |
| priorityDate |
2011-12-19^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |