http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104465339-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02104 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0465 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 |
| filingDate | 2013-12-27^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-07-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-07-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104465339-B |
| titleOfInvention | The manufacture method of semiconductor devices |
| abstract | The present invention provides a kind of manufacture method of semiconductor devices, including：N types epitaxial layer, p types epitaxial layer and n+ regions are sequentially formed in the first surface of n+ type silicon carbide substrates；Cushion is formed in n+ regions；Photo-conductive film pattern is formed in a part for cushion；By the use of photo-conductive film pattern as mask to etch buffer layer to form buffering layer pattern, buffering layer pattern is arranged in photo-conductive film pattern lower section and exposes the part in n+ regions；The first metal layer and second metal layer are sequentially formed in the exposed portion in n+ regions and photo-conductive film pattern；The Part II of removal buffering layer pattern, photo-conductive film pattern, the Part II of the first metal layer and second metal layer；By the use of the Part I of the first metal layer and the Part I of second metal layer as mask to the exposed portion etching in n+ regions to form groove, wherein groove passes through n+ regions and p type epitaxial layers, is formed on n type epitaxial layers. |
| priorityDate | 2013-09-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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