| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-368 |
| filingDate |
2014-12-25^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2017-11-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-104810387-B |
| titleOfInvention |
P-type metal oxide semiconductor material and its manufacture method |
| abstract |
The invention provides a kind of P-type metal oxide semiconductor material and preparation method thereof.The P-type metal oxide semiconductor material has chemical formula：In (1‑a) Ga (1‑b) Zn (1+a+b) O 4 Wherein 0≤a≤0.1,0≤b≤0.1 and 0 ＜ a+b≤0.16, and the P-type metal oxide semiconductor material has a hole between 1 × 10 11 cm ‑3 To 5 × 10 18 cm ‑3 Between. |
| priorityDate |
2013-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |