http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104934318-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02656 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 |
| filingDate | 2015-06-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-12-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-104934318-B |
| titleOfInvention | A kind of preparation method of N-type low defect silicon carbide epitaxial wafer |
| abstract | The present invention provides a kind of preparation method of N-type low defect silicon carbide epitaxial wafer, comprising steps of the preparation of substrate, online etched substrate, the growth of buffer layer and epitaxial layer growth, the method that the growths of epitaxial layers uses " grow, etch, brushing, regrowth ".This method significantly reduces basal plane dislocation density, reduces chamber hortungskoriper, reduces the defect concentration on silicon carbide epitaxial wafer surface, improve the quality of silicon carbide epitaxy material；And it is suitble to range wide, processing cost is low, is suitble to industrialized production. |
| priorityDate | 2015-06-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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