| abstract |
The invention relates to a low-temperature polysilicon thin film transistor, comprising: a substrate; a buffer layer formed on the substrate; a semiconductor layer formed on the buffer layer; a gate insulating layer formed on the buffer layer and the semiconductor layer; The gate on the layer; the dielectric layer formed on the gate insulating layer and the gate; and the passivation layer formed on the dielectric layer; respectively formed inside the passivation layer, the dielectric layer and the gate insulating layer There are a first contact hole and a second contact hole, and a source electrode and a drain electrode are respectively formed on the first contact hole and the second contact hole; the semiconductor layer is a low-temperature polysilicon layer, and a reflective layer is also provided between the buffer layer and the semiconductor layer and/or insulation. The present invention also relates to a method for preparing the above-mentioned thin film transistor, which mainly uses processes such as deposition, photolithography, etching, and laser irradiation to prepare the above-mentioned thin film transistor. The low-temperature polysilicon thin film transistor of the present invention can obtain larger polysilicon grain size, which helps to obtain larger electron mobility. |