http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105428183-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J9-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J1-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| filingDate | 2015-11-17^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-08-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-08-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105428183-B |
| titleOfInvention | A kind of reflective NEA GaN nano wires array photoelectric negative electrode and preparation method |
| abstract | The present invention proposes a kind of reflective NEA GaN nano wires array photoelectric negative electrode and preparation method, the reflective NEA GaN nano wires array photoelectric negative electrode is the superficial growth p-type GaN nano wire in Si or SiC substrate, and the nano-wire array progress Cs/O activation of growth is obtained, it includes substrate layer, the nano-wire array emission layer positioned at substrate layer surface；Nano-wire array emission layer is made up of some p-type GaN nano wires, and p-type GaN nano wire surface is adsorbed with Cs/O active coatings；The substrate layer is Si or SiC.The present invention can reduce photoelectronic transport distance while material emissivity is reduced, and the diameter of control nano wire fully absorbs photon, improves GaN photocathode quantum efficiencies. |
| priorityDate | 2015-11-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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