http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105603530-B

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
filingDate 2016-01-12^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-02-27^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2018-02-27^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-105603530-B
titleOfInvention For the raw material of carborundum crystals high-speed rapid growth and the growing method of carborundum crystals
abstract The present invention relates to the growing method of a kind of raw material for carborundum crystals high-speed rapid growth and carborundum crystals, belong to technical field of semiconductors.In order to solve the problems, such as that existing carborundum crystals life lifting speed difference is low with efficiency, a kind of method of the raw material for carborundum crystals high-speed rapid growth and carborundum crystals high-speed rapid growth is provided, the raw material contains carborundum particle, and the average grain diameter of the carborundum particle is less than 5 μm or the mixed material formed using the mixing of the carborundum particle of at least two different shapes and/or at least two different-grain diameters, and at least it is less than 5 μm of carborundum particle in the raw material containing a kind of average grain diameter.And Silicon carbide crystal growth method includes above-mentioned raw materials being put into crucible, heating crucible makes the raw material in crucible be recrystallized after distilling, and obtains carborundum crystals.The purpose for improving rate of sublimation and efficiency can be reached.
priorityDate 2016-01-12^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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