http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105624782-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-00 |
| filingDate | 2015-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-03-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105624782-B |
| titleOfInvention | A kind of preparation method of gallium oxide film |
| abstract | The invention discloses a kind of preparation method of gallium oxide film, comprise the following steps：Step 1, gallium source is put into reaction boat, reaction boat is put into crystal reaction tube；Step 2, will clean, drying after substrate be placed on substrate bracket, be put into crystal reaction tube；Step 3, gallium source gas circuit is opened, allows inert gas to enter crystal reaction tube by reacting boat, reacts the outlet face substrate surface of boat；Step 4, oxygen source gas circuit is opened, allows inert gas to carry oxygen source and enters crystal reaction tube；Step 5, heated quartz reaction tube；Reaction boat and substrate in heated quartz reaction tube；Step 6, the operating temperature of regulation reaction boat and substrate, growth time is set, the depositing gallium oxide film on substrate, completes to prepare.Using the method for the present invention, can using raw material of industry gallium and iodine, sapphire and silicon from commercialization prepare gallium oxide film in atmospheric conditions as substrate as raw material. |
| priorityDate | 2015-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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