http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105760593-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F2111-04 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F30-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F30-367 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F17-50 |
| filingDate | 2016-02-05^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-11-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105760593-B |
| titleOfInvention | A kind of MOS transistor NBTI effects R-D model parameter extraction methods |
| abstract | The invention discloses a kind of MOS transistor NBTI effects R-D model parameter extraction methods, include the following steps：Linear transformation determines fit interval step：The coordinate system of test data is converted, and according to the linear trend trade-off curve fit interval of reference axis；Rough extraction model parameter location step：Model parameter to be fitted is set, converts the nonlinear curve of R-D models to linearity curve using linear transformation, linearity curve is obtained into first group of solution of model parameter by equation group, solving equations are obtained after linear fit；Model parameter is adjusted, then obtains second group of solution of model parameter；The range of each parameter is determined by two groups of solutions of parameter；Accurate extraction step：Parameter optimization is carried out using genetic algorithm, object function is determined, then constraints is set by the range that each model parameter has obtained, finally executes the exact value that model parameter is calculated in algorithm. |
| priorityDate | 2016-02-05^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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