http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105789438-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24 |
| filingDate | 2016-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-07-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-07-31^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105789438-B |
| titleOfInvention | A kind of preparation method of Cu-based resistive variable memory and memory |
| abstract | The invention discloses a method for preparing a Cu-based resistive variable memory and the memory. The preparation method includes: forming a copper lead in a groove through a damascene copper interconnection process, and the copper lead includes a copper lower electrode for growing a storage medium , the copper lead is arranged above the first cap layer; a second cap layer is formed above the copper lead; a hole is made on the second cap layer corresponding to the copper lower electrode, and the hole is used Exposing the copper lower electrode; patterning and compounding the copper lower electrode to form a compound barrier layer, the compound barrier layer is a compound formed by the combination of elements Cu, Si and N or a compound formed by the combination of elements Cu, Ge and N ; Depositing a solid electrolyte material and an upper electrode on the compound barrier layer. Through the above technical solution, the technical problem of high implantation efficiency of Cu ions in the Cu-based resistive variable memory in the prior art is solved, and the fatigue characteristics of the memory are improved. |
| priorityDate | 2016-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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