http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106062953-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2013-12-27^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-01-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-01-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106062953-B |
| titleOfInvention | Biaxial Tensile Strained Ge Channels for CMOS |
| abstract | An apparatus comprising: a complementary metal-oxide-semiconductor (CMOS) inverter comprising an n-channel metal-oxide-semiconductor field effect transistor (MOSFET); and a p-channel MOSFET, wherein in the n-channel MOSFET The material of the channel and the material of the channel in the p-channel MOSFET are subjected to biaxial tensile strain. A method comprising: forming an n-channel metal oxide semiconductor field effect transistor (MOSFET); forming a p-channel MOSFET; and connecting gate electrodes of the n-channel MOSFET and the p-channel MOSFET, and connecting the n-channel MOSFET and the The drain region of a p-channel MOSFET, wherein the material of the channel in the n-channel MOSFET and the material of the channel in the p-channel MOSFET are subjected to biaxial tensile strain. |
| priorityDate | 2013-12-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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