http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106206943-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-021 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2014-03-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-01-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-01-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106206943-B |
| titleOfInvention | Nitrogen doping modified phase change thin film material and preparation method thereof |
| abstract | The invention discloses a nitrogen-doped modified phase-change film material and a preparation method thereof. The phase-change film material is composed of three elements, Zn, Sb, and N, and its chemical composition formula is N x (Zn 15 Sb 85 ) 1‑x , where 0.48≤x≤0.49. During the preparation, argon gas and nitrogen gas are introduced simultaneously in the process of depositing the Zn 15 Sb 85 thin film by radio frequency sputtering, and the obtained phase change thin film material is doped with nitrogen element. Compared with the pure Zn 15 Sb 85 film, the modified nitrogen-doped phase change film material of the present invention has a faster crystallization speed, which greatly improves the storage speed of the phase change memory; and the modified film has a faster crystallization speed. The crystallization temperature and activation energy are higher, and the data retention ability is enhanced; the crystalline resistance and amorphous resistance of the nitrogen-doped modified phase change film material are higher, which reduces the power consumption of RESET and the phase change produced by it. The operating power consumption of the memory. |
| priorityDate | 2014-03-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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