http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106373870-B

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02656
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
filingDate 2016-11-24^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-06-02^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-06-02^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106373870-B
titleOfInvention Semiconductor structure and preparation method
abstract The invention discloses a semiconductor structure and a preparation method thereof. The method comprises the following steps: (1) forming a nitride transition layer and a nitride semiconductor layer in order on an upper surface of a substrate so as to obtain a first complex; (2) performing ion implantation treatment on the first complex, wherein the implanted ions contain hydrogen ions; (3) subjecting the first composite body to a bonding process with a substrate having an insulating layer on an upper surface thereof, in which the insulating layer is in contact with the nitride semiconductor layer, so as to obtain a second composite body; and (4) subjecting the second composite to a lift-off process so as to obtain a third composite and the semiconductor structure, respectively, wherein the nitride semiconductor layer is formed of a nitride semiconductor material containing Al. The method has simple operation steps and lower requirements on instruments and equipment, and can avoid the limitation on the size of a semiconductor structure caused by the undersize of the wafer when the aluminum nitride wafer is used for preparation.
priorityDate 2016-11-24^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419518858
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http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID90455

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