http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106711035-B

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
filingDate 2015-12-07^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-07-12^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-07-12^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-106711035-B
titleOfInvention Groove structure on silicon carbide substrate with and preparation method thereof
abstract A kind of groove structure and preparation method thereof on silicon carbide substrate; production method includes to be sequentially provided silicon carbide substrate; protective layer is formed on silicon carbide substrate; barrier layer is formed on protective layer; patterned barrier layer, protective layer are rigid mask pattern silicon carbide substrate to form groove using patterned barrier layer, remove patterned barrier layer to form opening; high-temperature tempering process is carried out to form the channel bottom of arc-shaped, and removes protective layer.
priorityDate 2015-11-12^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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