| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8613
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-049
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02592
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0661 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2016-09-30^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-04-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-04-10^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-106847679-B |
| titleOfInvention |
Method for manufacturing silicon carbide semiconductor device by removing amorphized portion |
| abstract |
The present invention relates to a method for manufacturing a silicon carbide semiconductor device by removing an amorphized portion. A trench (190) extending from the main surface (101 a) into the crystalline silicon carbide semiconductor layer (100 a) is formed. A mask (400) is formed comprising a mask opening (401), the mask opening (401) exposing the trench (190) and a rim section (105) surrounding a main surface (101 a) of the trench (190). By irradiation with a particle beam (990), a first portion (181) of the semiconductor layer (100 a) exposed by the mask opening (401) and a second portion (182) outside a perpendicular projection of the mask opening (401) and directly adjoining the first portion (181) are amorphized. The vertical extension of the amorphized second portion (182) decreases with increasing distance from the first portion (181). The amorphized first and second portions (181, 182) are removed. |
| priorityDate |
2015-10-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |