http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106876475-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| filingDate | 2016-12-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-06-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-06-08^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-106876475-B |
| titleOfInvention | Field-effect transistor, display element, image display device, and system |
| abstract | A field effect transistor includes: a gate electrode configured to apply a gate voltage; a source electrode and a drain electrode configured to send out a current; an active layer disposed adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor; and a gate insulating layer interposed between the gate electrode and the active layer. Wherein the gate insulating layer comprises a paraelectric amorphous oxide containing a group A element as an alkaline earth metal and a group B element as at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a thickness of 4.0 x 10 17 /cm 3 Or higher carrier density. |
| priorityDate | 2015-12-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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