| abstract |
One aspect of the invention relates to a method for connecting a semiconductor chip (1) to a substrate (2). The semiconductor chip (1) has a semiconductor body (10) with an underside (10b), on which a lower chip metallization (12) is applied. The substrate (2) has a metal surface (2t). A first contact metallization layer (31) is produced on the lower chip metallization layer (12), and a second contact metallization layer (32) is produced on the metal surface (2t) of the substrate (2). The semiconductor chip (1) and the substrate (2) are pressed together for the duration of the pressing so that the first contact metallization layer (31) and the second contact metallization layer (32) are directly and planarly attached to each other Depend on. The first contact metallization layer ( 31 ) is continuously kept at a temperature below the melting temperature of the first contact metallization layer ( 31 ) during the pressing period. Accordingly, the second contact metallization layer ( 32 ) is continuously kept at a temperature below the melting temperature of the second contact metallization layer ( 32 ) during the pressing period. After being pressed together, the first contact metallization layer ( 31 ) and the second contact metallization layer ( 32 ) have a total layer thickness ( d3132 ) of less than 1000 nm. |