Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7926 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7889 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551 |
filingDate |
2016-08-19^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0b33978eb5b6a7c40c481c7af581a75 |
publicationDate |
2017-09-01^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-107123650-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
Semiconductor device and its manufacturing method. A method of manufacturing a semiconductor device is disclosed, the method comprising the steps of: forming a stacked structure including first material layers and second material layers alternately stacked on top of each other; forming a layer passing through the stacked structure a pillar comprising an overhang projecting above the uppermost surface of the stack; a conductive layer forming the overhang surrounding the pillar; Oxidation is performed to form a conductive pattern in contact with the protruding portion of the pillar. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108470736-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108470736-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109509834-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109509834-A |
priorityDate |
2016-02-23^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |