http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107123650-A

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publicationDate 2017-09-01^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107123650-A
titleOfInvention Semiconductor device and manufacturing method thereof
abstract Semiconductor device and its manufacturing method. A method of manufacturing a semiconductor device is disclosed, the method comprising the steps of: forming a stacked structure including first material layers and second material layers alternately stacked on top of each other; forming a layer passing through the stacked structure a pillar comprising an overhang projecting above the uppermost surface of the stack; a conductive layer forming the overhang surrounding the pillar; Oxidation is performed to form a conductive pattern in contact with the protruding portion of the pillar.
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