http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107464830-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9c0a41f37825c65873020fdbbe62c02f |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-121 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 |
filingDate | 2017-07-18^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8de8e56ab615c3b5948ede0fc5f69fcc |
publicationDate | 2017-12-12^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-107464830-A |
titleOfInvention | Array substrate and manufacturing method, display panel |
abstract | The present invention provides an array substrate, including a substrate, on which a driving thin film transistor and a switching thin film transistor are arranged, and each of the driving thin film transistor and the switching thin film transistor includes a gate, a gate insulating layer, an active layer, and a source, A drain, a barrier layer is also provided between the gate of the driving thin film transistor and the gate insulating layer. The present invention also provides a method for manufacturing an array substrate, including forming a barrier layer on the gate of the driving thin film transistor; compared with the prior art, by A blocking layer is provided to prevent the influence of water and oxygen active impurity ions on the active layer of the driving thin film transistor, thereby improving the electrical properties and reliability of the thin film transistor and ensuring the normal operation of the driving thin film transistor driving the organic light emitting diode. |
priorityDate | 2017-07-18^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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