http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107612541-A

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filingDate 2017-07-11^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77a990c119bc5cbca18b38e99cda244f
publicationDate 2018-01-19^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107612541-A
titleOfInvention Semiconductor device
abstract This disclosure relates to semiconductor device.A kind of semiconductor device includes drive circuit, has multiple FinFET;Memory cell, there are multiple FinFET and the first output signal of output from driver circuit is provided to by each in wordline;First power supply wiring, it is provided with the first power supply potential;Second source distribution, it is provided with second source current potential;Circuit is set with ground potential, it is coupled to the first power supply wiring, second source distribution and drive circuit, and selects the first power supply potential or second source current potential to be supplied to drive circuit as operating potential.The N-type FinFET for being included in the FinFET in drive circuit is provided with the first power supply potential or second source current potential for setting circuit to select by ground potential.
priorityDate 2016-07-12^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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