| abstract |
This application relates to the technical field of three-dimensional memory, in particular to the arrangement structure of memory cells in three-dimensional memory. The memory array in the prior art is a hexagonal honeycomb structure, but there are difficulties in etching and uneven arrangement of channels and storage density is difficult to improve, the present application obtains a new storage array by rotating the existing storage array 30 degrees clockwise, which increases the storage density by at least about 6%. The barrier makes the metal deposition more uniform, and the distance between the minimum line width bit line connection becomes larger, making the manufacturing process easier. |